FDD8453LZ datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
* HBM ESD protection level >7kV typical (Note 4)
* RoHS Complia.

Application

* Inverter
* Synchronous Rectifier D G S D DT O- P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25°C unle.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applicati.

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